Memristor compact model with oxygen vacancy concentrations as state variables

We present a unique compact model for oxide memristors based upon the concentration of oxygen vacancies as state variables. In this model, increase (decrease) in vacancy is similar effect to reduction (expansion) tunnel gap used variable existing models, providing mechanism electronic current polarity applied voltage. Rate equations defining dynamics variables are obtained from simplifications recent paper which processes (i.e., electron capture/emission) were combined with atomic Frenkel-pair generation/recombination, diffusion) stemming thermochemical dielectric breakdown. Central proposed occupancy traps on resistive switching dynamics. The calculated considering Ohmic, band-to-band, and bound-to-band contributions. includes uniform self-heating Joule heating conductive loss terms. calibrated using experimental current–voltage characteristics [Formula: see text] different electrode materials. Though general presented, delta-shaped density states profile found capable accurately representing data while minimal description transitions. implemented Verilog-A tested read/write operations 1T1R nonvolatile memory array evaluate its ability perform circuit simulations practical interest. A particular benefit that does not make strong assumptions regarding filament geometry scant experimental-evidence exists support.